Measurement of Hall Mobility in 4H-SiC for Improvement of the Accuracy of the Mobility Model in Device Simulation
Authors:
- 15 September 2003
- journal article
- Published by Trans Tech Publications, Ltd. in Materials Science Forum
- Vol. 433-436, 443-446
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Conductivity Anisotropy in Epitaxial 6H and 4H SicMRS Proceedings, 1994
- Carrier mobilities in silicon empirically related to doping and fieldProceedings of the IEEE, 1967