Remarkable Increase in Field Effect Mobility of Amorphous IZTO Thin-Film Transistors With Purified ZrOxGate Insulator
- 10 January 2018
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 39 (3) , 371-374
Abstract
We report the effect of purification of ZrO x precursor on the performance of solution processed amorphous indium-zinc-tin oxide thin-film transistors with a ZrO x gate insulator, which is processed at the maximum temperature of 300 °C in air. By purification, the saturation mobility (μ sat ) increases from 2.45 ± 0.83 to 15.42 ± 4.01 cm 2 V -1 s -1 , subthreshold swing decreases from 141.44 ± 14.08 to 87.90 ± 11.05 mV/decade and drain current ON/OFF ratio increases from ~10 7 to ~10 9 . The leakage currents are remarkably reduced by using purified ZrO x as a gate insulator. The improvement is mainly due to the reduced impurities and less oxygen vacancies in ZrO x .Keywords
Funding Information
- Technology Innovation Program of Industrial Strategic Technology Development Program (Development of High-resolutions OLED Micro-Display and Controller SoC for AR/VR Device) (10080454)
- Ministry of Trade, Industry & Energy (MOTIE, Korea)
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