Depletion charge measurements by tunneling spectroscopy GaAs-GaAlAs field-effect transistors
Authors:
- 20 June 1988
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (25) , 2136-2138
Abstract
The subband energies on GaAs-GaAlAs field-effect transistor samples were measured by tunneling spectroscopy using a structure, where the tunneling process starts from an accumulation layer, and a conventional structure, where the electrons tunnel from a metal electrode into the two-dimensional electron gas. Self-consistent calculations were performed to determine the depletion charge from the measured subband energies. Furthermore, the influence of a backgate voltage was investigated both experimentally and theoretically. As far as we know, this is the first direct determination of the depletion charge in GaAs-GaAlAs field-effect transistor structures.Keywords
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