On the modelling of temperature dependence of subthreshold swing in MOSFETs down to cryogenic temperature
Authors:
- G. GhibaudoGGG. Ghibaudo
- M. AouadMAM. Aouad
- M. CasseMCM. Casse
- S. MartinieSMS. Martinie
- T. PoirouxTPT. Poiroux
- F. BalestraFBF. Balestra
- 1 August 2020
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 170
Abstract
No abstract availableKeywords
Funding Information
- European Commission
This publication has 13 references indexed in Scilit:
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