Stepped morphology on 4H and 15R silicon carbide: modelling by a random walk
Authors:
- P. HeuellPHP. Heuell
- M.A. KulakovMKM.A. Kulakov
- B. BullemerBBB. Bullemer
- 1 July 1995
- journal article
- Published by Elsevier in Surface Science
- Vol. 331-333, 965-970
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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