Role of surface morphology in wafer bonding
Authors:
- 1 January 1991
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (1) , 257-260
Abstract
The strain patterns detected by x‐ray topography in wafers bonded for silicon‐on‐insulator (SOI) technology were found related to the flatness nonuniformity of the original wafers. Local stresses due to the bonding process are estimated to be about 1×108 dynes/cm2. The stress is reduced about 100 times for the thin (0.5 μm) SOI films. Most of the wafer deformation occurs during room temperature mating of the wafers. The deformation is purely elastic even at 1200 °C. The magnitude of the stress appears insignificant for complimentary metal‐oxide‐semiconductor devices performance.Keywords
This publication has 5 references indexed in Scilit:
- Bonding of silicon wafers for silicon-on-insulatorJournal of Applied Physics, 1988
- Wafer Bonding for SoiMRS Proceedings, 1987
- Stress-enhanced carrier mobility in zone melting recrystallized polycrystalline Si films on SiO2-coated substratesApplied Physics Letters, 1982
- Film-edge-induced stress in substratesJournal of Applied Physics, 1979
- Measurement of Strains at Si-SiO2 InterfaceJournal of Applied Physics, 1966