Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers
Authors:
- 9 April 1990
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (15) , 1442-1444
Abstract
Previously reported growth of SiC films on SiC by chemical vapor deposition (CVD) used Acheson and Lely α-SiC crystal substrates. We report the CVD growth and evaluation of high quality 6H-SiC films on 6H-SiC wafers cut from large boules grown by the modified-sublimation process. The single-crystal 6H-SiC films were grown on wafers oriented 3° to 4° off the (0001) plane toward the 〈112̄0〉 direction. The films, up to 12 μm thick, had surfaces that were smooth and featureless. The high quality of the films was demonstrated by optical and electron microscopy, and low-temperature photoluminescence.Keywords
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