Plasma-enhanced atomic layer deposition of tantalum thin films: the growth and film properties
Authors:
- H KimHKH Kim
- S.M RossnagelSRS.M Rossnagel
- 1 September 2003
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 441 (1-2) , 311-316
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Microwave synthesis of nanocrystalline metal sulfides in formaldehyde solutionMaterials Science and Engineering: B, 2001
- Annealing effects of tantalum films on Si and SiO2/Si substrates in various vacuumsJournal of Applied Physics, 2001
- Oxidation of Ta diffusion barrier layer for Cu metallization in thermal annealingThin Solid Films, 2001
- Tantalum diffusion barrier grown by inorganic plasma-promoted chemical vapor deposition: Performance in copper metallizationJournal of Materials Research, 2000
- Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriersJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 2000
- Low temperature plasma-promoted chemical vapor deposition of tantalum from tantalum pentabromide for copper metallizationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1998
- The relationship between deposition conditions, the beta to alpha phase transformation, and stress relaxation in tantalum thin filmsJournal of Applied Physics, 1992
- Tantalum as a diffusion barrier between copper and silicon: Failure mechanism and effect of nitrogen additionsJournal of Applied Physics, 1992
- Factors controlling the structure of sputtered Ta filmsThin Solid Films, 1973
- Preparation and properties of tantalum thin filmsThin Solid Films, 1972