High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor Deposition
Authors:
- 22 November 2001
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 188 (1) , 333-336
Abstract
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- Characteristics of Mg‐Doped GaN Grown by Metallorganic Chemical Vapor DepositionJournal of the Electrochemical Society, 1997
- Very low dark current metal–semiconductor–metal ultraviolet photodetectors fabricated on single-crystal GaN epitaxial layersApplied Physics Letters, 1997