Improved performance of InGaN/GaN blue light‐emitting diodes with a SiO2/TiO2 Bragg reflector
Authors:
- 30 September 2005
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 202 (14) , 2836-2839
Abstract
InGaN/GaN blue light‐emitting diodes (LEDs) on sapphire substrates with a SiO2/TiO2 Bragg reflector were fabricated. The deposited SiO2/TiO2 Bragg reflectors exhibit a high reflectivity of up to nearly 96.9% at about 460 nm. When the InGaN/GaN LEDs with a SiO2/TiO2 Bragg reflectors were operated at a forward current of 20 mA at room temperature, the peak wavelength, the light output power, and the external quantum efficiency were measured to be 470 nm, 5.91 mW, and 11.21%, respectively. The light output power was as high as 15.33 mW at the forward current of 100 mA.Keywords
This publication has 16 references indexed in Scilit:
- InGaN/GaN quantum-well heterostructure light-emitting diodes employing photonic crystal structuresApplied Physics Letters, 2004
- III-nitride blue and ultraviolet photonic crystal light emitting diodesApplied Physics Letters, 2004
- GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodesIEEE Sensors Journal, 2002
- High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 2001
- Back-Illuminated GaN Metal-Semiconductor-Metal UV Photodetector with High Internal GainJapanese Journal of Applied Physics, 2001
- GaN and InGaN Metal-Semiconductor-Metal Photodetectors with Different Schottky Contact MetalsJapanese Journal of Applied Physics, 2001
- Photo-Electrochemical Gate Recess Etching for the Fabrication of AlGaN/GaN Heterostructure Field Effect TransistorJapanese Journal of Applied Physics, 2001
- Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting DiodesJapanese Journal of Applied Physics, 1999
- Continuous-wave operation of InGaN/GaN/AlGaN-based laser diodes grown on GaN substratesApplied Physics Letters, 1998
- Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodesApplied Physics Letters, 1994