Super-flat interfaces in pseudomorphic In0.72Ga0.28As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy
Authors:
- 1 May 2000
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena
- Vol. 18 (3) , 1598-1600
Abstract
We investigated flatness of heterointerfaces in pseudomorphic In0.72Ga0.28As/In0.52Al0.48As quantum wells (QWs) with well widths Lw of 1.3, 1.7, and 3.4 nm grown on (411)A InP substrates by molecular beam epitaxy (MBE). Full width at half maximum of a photoluminescence (12 K) peak from the (411)A QW with Lw=1.3 nm was as narrow as 20.7 meV, which is 28% smaller than that (28.9 meV) of the corresponding QW grown on a conventional (100) InP substrate. This result indicates that effectively atomically flat interfaces [(411)A super-flat interfaces] were successfully formed, for the first time, in pseudomorphic In0.72Ga0.28As/In0.52Al0.48As QWs grown on the (411)A InP substrate by MBE.Keywords
This publication has 11 references indexed in Scilit:
- High-quality InAlAs layers grown on (411)A-oriented InP substrates by molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1999
- 30-nm-Gate InP-Based Lattice-Matched High Electron Mobility Transistors with 350 GHz Cutoff FrequencyJapanese Journal of Applied Physics, 1999
- Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxyJournal of Electronic Materials, 1998
- Super-Flat Interfaces in Pseudomorphic InxGa1-xAs/Al0.28Ga0.72As Quantum Wells with High In Content (x = 0.15) Grown on (411)A GaAs Substrates by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1998
- Molecular beam epitaxial growth of pseudomorphic InAlAs/InGaAs high electron mobility transistors with high cut-off frequenciesJournal of Crystal Growth, 1995
- Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxyJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena, 1994
- Extremely Flat Interfaces in GaAs/AlGaAs Quantum Wells Grown on GaAs (411)A Substrates by Molecular Beam EpitaxyJapanese Journal of Applied Physics, 1993
- Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wellsApplied Physics Letters, 1992
- Molecular-beam epitaxial growth and characterization of pseudomorphic GaInAs/AlInAs modulation-doped heterostructuresJournal of Vacuum Science & Technology B, 1987
- Photoluminescence and absorption linewidth of extremely flat GaAs-AlAs quantum wells prepared by molecular beam Epitaxy including interrupted deposition for atomic layer smoothingSurface Science, 1986