6-bit data storage through resistive switching in α-Fe2O3/Fe bilayers

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Abstract
6-bit memory devices with different magnetization states are of great interest since they can encode six bits of information per memory cell. Indeed, this can cater a 64-fold increase in data storage capability compared to single-bit systems, which can significantly boost the data density and computational efficiency. Here, we demonstrate 64 distinct magnetization states (6-bit) by varying applied voltages, revealing the potential for 6-bit data storage capabilities in Ag/α-Fe2O3/Fe/FTO based devices. These magnetization states are volatile in nature. Large vertical magnetization shift of hysteresis loop in Ag/α-Fe2O3/Fe/FTO device is evident when electric field E Z and applied magnetic field B Z are parallel. Observed vertical magnetization shift is calculated to be 44 emu cc−1 (79%) for the voltage bias of 3 V. This substantial change is attributed to interfacial spin pinning induced by resistive switching phenomenon through oxygen ion migration across the interface. The resistive switching shows analog characteristics with a non - volatile behavior for 95 cycles. Magnetization switching with high reversibility and reproducibility is shown by repeatedly applying 0.2 V and 1.2 V, underscoring the stability of the switching behaviour in the fabricated device. Magnetization shift changes with a change in voltage and it enhances as the applied voltage increases. This type of capabilities offer significant potential for advancing multi-bit data storage, which can enhance the efficiency of spintronic devices.
Funding Information
  • DRDO (ERIP/IP/202308003/M/01/1835)
  • SERB (CRG/2020/003497)
  • the Indian Institute of Technology, Hyderabad, DST
  • FIST (SR/ FST/PSI-215/2016)

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