Dislocations and Stacking Faults in Ti 3 SiC 2
Authors:
- 1 June 1998
- journal article
- Published by Wiley in Journal of the American Ceramic Society
- Vol. 81 (6) , 1677-1681
Abstract
The ternary carbide Ti 3 SIC 2 fabricated by a reactive hot‐press route is investigated by transmission electron microscopy. The material consists mainly of large elongated grains with planar boundaries, and is characterized by a low defect density. Dislocations are observed in the grains and at grain boundaries. Perfect dislocations with b = 1/3 lying in (0001) basal planes are present. These basal plane dislocations are mobile and multiply as a result of room‐temperature deformation. All of the stacking faults observed lie in the basal planes.Keywords
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