Properties of gallium selenide single crystal
Author:
- 1 January 1994
- journal article
- review article
- Published by Elsevier in Progress in Crystal Growth and Characterization of Materials
- Vol. 28 (4) , 275-353
Abstract
No abstract availableKeywords
This publication has 373 references indexed in Scilit:
- Frequency Response in p-GaSe Single Crystals ∥ at Different TemperaturesPhysica Status Solidi (a), 1992
- Deep Levels of Zn-Doped p-GaSePhysica Status Solidi (a), 1991
- Effect of Doping on Exciton States in InSe and GaSe Lamellar SemiconductorsPhysica Status Solidi (a), 1991
- Picosecond Kinetics of Photoluminescence in GaSePhysica Status Solidi (a), 1990
- The injection peculiarities of minority charge carriers in the anisotype SIS structurePhysica Status Solidi (a), 1989
- Kinetic and Optical Properties of HxInSe and HxxGaSe Proton Intercalates and Their Thermodynamic ModelPhysica Status Solidi (a), 1989
- On a mechanism of photo-E.M.F. formation in SIS structuresPhysica Status Solidi (a), 1988
- Simulation of residual photoconductivity at a metal–semiconductor contactPhysica Status Solidi (a), 1988
- Dislocations in AIIIBVI single crystalsPhysica Status Solidi (a), 1988
- Photoluminescence in GaSePhysica Status Solidi (a), 1977