Phosphorous‐Doped High‐Entropy Oxides Enabling Full Spectrum Utilization of BiVO 4 Photoanodes for Efficient Water Oxidation

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Abstract
High‐performance BiVO 4 photoanodes generally requires elaborate modification on both bulk and surfaces, which inevitably increases the complexity of photoanode design. Herein, a phosphorus‐doped high‐entropy oxide composite (P‐HEO) is decorated on a BiVO 4 photoanode (denoted as PHBVO), which achieves broadband solar absorption (86% in 300–2500 nm vs 31% for pristine BiVO 4 ) and delivers a photocurrent density of 6.36 mA cm −2 at 1.23 V RHE , representing a fourfold enhancement compared to pristine BiVO 4 photoanodes. Systematical studies reveal that lattice distortion in P‐HEOs induces band structure reconstruction and oxygen vacancy formation, while interfacial P─O coupling promotes d‐p orbital hybridization, reducing the oxygen evolution reaction overpotential. Moreover, the photothermal effect of P‐HEOs suppresses carrier recombination, enhancing electron mobility by 2.6‐fold. PHBVO demonstrates stability exceeding 160 h under continuous AM 1.5 G illumination, which is attributed to a robust high‐entropy oxide interface. This work provides a proof‐of‐concept for the design of efficient photoanodes through surface modification simultaneously achieving the enhancement in light harvesting, carrier transport and surface catalytic activity.
Funding Information
  • National Natural Science Foundation of China (52372292)
  • National Natural Science Foundation of China (62288102)
  • Shenzhen Science and Technology Innovation Program (JCYJ20240813150835046)

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