Engineered interface states and optical absorption of β-Ga2O3/4H-SiC heterojunctions by irradiation-induced oxygen defects from first-principles
- 6 February 2024
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry C
- Vol. 12 (19) , 7095-7102
Abstract
Boundary oxygen vacancies decrease the bandgap of the β-Ga2O3/4H-SiC heterojunction, while interface oxygen vacancies create interface states at the interface.Keywords
Funding Information
- National Natural Science Foundation of China (52076123)
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