Polarization-dependent angular reflectance of silicon and germanium in the infrared
Authors:
- Z.M. ZhangZZZ.M. Zhang
- L.M. HanssenLHL.M. Hanssen
- R.U. DatlaRDR.U. Datla
- 30 June 1996
- journal article
- Published by Elsevier in Infrared Physics & Technology
- Vol. 37 (4) , 539-546
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Infrared refractive indices of LaAlO_3, LaGaO_3, and NdGaO_3Journal of the Optical Society of America B, 1994
- Modelling the reflectance of siliconInfrared Physics & Technology, 1994
- Epifilm thickness measurements using Fourier transform infrared spectroscopy: Effect of refractive index dispersion and refractive index measurementJournal of Applied Physics, 1994
- In situ substrate temperature measurement in high-T c superconducting film depositionJournal of Vacuum Science & Technology A, 1993
- Specular reflectance of silicon and germanium at variable angles of incidence in the infrared regionInfrared Physics, 1993
- Standard of Specular Reflectance at Glancing Incidence for the Infrared RegionMetrologia, 1993
- Monitoring of photodeposited superconductive filmsThin Solid Films, 1992
- Electron scattering rate in epitaxial superconducting filmsPhysical Review B, 1992
- Infrared Refractive Index of Thin YBa2Cu307 Superconducting FilmsJournal of Heat Transfer, 1992
- Standard of specular reflectance at near normal incidence for the infrared regionApplied Optics, 1990