Hardness of PbS nanocrystal-based photoconductor to x-ray irradiation
Authors:
- Diogo AlmeidaDADiogo Almeida
- Alexandre NeyretANAlexandre Neyret
- Clement GureghianCGClement Gureghian
- Dario MastrippolitoDMDario Mastrippolito
- Adrien KhaliliAKAdrien Khalili
- Albin ColleACAlbin Colle
- Marco PayeMPMarco Paye
- Mariarosa CavalloMCMariarosa Cavallo
- Dipak MaityDMDipak Maity
- Jiho RohJRJiho Roh
- Clemence VillefroyCVClemence Villefroy
- Sandrine IthurriaSISandrine Ithurria
Open Access
- 30 September 2026
- journal article
- Published by IOP Publishing in Nanotechnology
- Vol. 37 (39) , 395202
Abstract
Colloidal lead sulfide (PbS) nanocrystals (NCs) are emerging as cost-effective and solution-processable materials for infrared (IR) detection. Their use in a space environment is conditioned by their radiation tolerance. This study investigates the intrinsic robustness of PbS NC-based photoconductive devices to high-dose x-ray irradiation (up to 1.6 Grad [PbS]), far above the requirements for deep-space operation. PbS NC films exhibit gradual performance degradation without abrupt thresholds, attributed to their polycrystalline nature, which localizes defects and mitigates long-range lattice disruption. Optoelectronic measurements reveal a drop in both the dark and illuminated response, yet the signal-to-noise ratio improves due to the faster decay of the dark current. Spectroscopic analyses (x-ray photoemission spectroscopy/hard x-ray photoemission spectroscopy) confirm that the conductivity change can be attributed to x-ray-induced oxidation, which affects both Pb and S, forming sulfate and lead hydroxide phases that propagate throughout the NC volume. This oxidation reduces the effective NC size, blue-shifting the excitonic peak. Despite this, PbS NCs exhibit exceptional radiation hardness, comparable to that of radiation-hardened CMOS devices. These findings position PbS NCs as viable candidates for spaceborne IR detection, especially in oxygen-free environments where oxidation is naturally limited.Keywords
Funding Information
- RENATECH+ (clean room)
- Region Ile de France (sesame inside)
- CNES (these neyret)
- French National Research Agency (ANR-22-CE09-0018)
- ERC (n°101086358)
This publication has 31 references indexed in Scilit:
- Interface and Surface Chemistry Engineering in HgTe Quantum Dots for High‐Performance Infrared Optoelectronic DevicesAdvanced Materials, 2026
- InAs Nanocrystal-Based Infrared Imager Operating beyond Telecom WavelengthsNano Letters, 2026
- Infrared Nanocrystals for Space Application: Hardness to IrradiationsAdvanced Functional Materials, 2026
- Colloidal Quantum‐Dot Heterojunction Imagers for Room‐Temperature Thermal ImagingAdvanced Materials, 2025
- Planar Cation Passivation on Colloidal Quantum Dots Enables High‐Performance 0.35–1.8 µm Broadband TFT ImagerAdvanced Materials, 2024
- Photoemission Insight on Narrow Band Gap PbS Quantum Dots Relevant for Infrared ImagingThe Journal of Physical Chemistry C, 2024
- Dark Current Evolution in Irradiated MWIR HgCdTe PhotodiodesJournal of Electronic Materials, 2023
- Empirical Study of the Disparity in Radiation Tolerance of the Minority-Carrier Lifetime Between II–VI and III–V MWIR Detector Technologies for Space ApplicationsJournal of Electronic Materials, 2017
- Radiation damage in InGaAs photodiodes by 1 MeV fast neutronsRadiation Physics and Chemistry, 1998
- X-ray photoelectron spectra of lead oxidesAnalytical Chemistry, 1973