Integration of a split word line ferroelectric memory using a novel etching technology
Authors:
- 1 November 1999
- journal article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 27 (1-4) , 279-290
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Effect of hydrogen on Pb(Zr,Ti)O3-based ferroelectric capacitorsApplied Physics Letters, 1998
- The Effect of Al/Pt Interface Reaction on Lead-zirconate-titanate Capacitor and the Optimization of Via Contact for Double Metal Ferroelectric RAMJapanese Journal of Applied Physics, 1998
- Reactive ion etching damage to the electrical properties of ferroelectric thin filmsJournal of Materials Research, 1998
- A reactive ion etch study for producing patterned platinum structuresIntegrated Ferroelectrics, 1997
- Process and properties of Pt/Pb(Zr, Ti)O3/Pt integrated ferroelectric capacitorsIntegrated Ferroelectrics, 1997
- Electrode-induced degradation of Pb(ZrxTi1−x)O3 (PZT) polarization hysteresis characteristics in Pt/PZT/Pt ferroelectric thin-film capacitorsApplied Physics Letters, 1996
- Processing and performance of integrated ferroelectric and CMOS test structures for memory applicationsIntegrated Ferroelectrics, 1995