Surface Oxide Effect on Optical Sensing and Photoelectric Conversion of α-In2Se3 Hexagonal Microplates
- 2 March 2013
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 5 (6) , 2269-2277
Abstract
The surface formation oxide assists of visible to ultraviolet photoelectric conversion in α-In2Se3 hexagonal microplates has been explored. Hexagonal α-In2Se3 microplates with the sizes of 10s to 100s of micrometers were synthesized and prepared by the chemical vapor transport method using ICl3 as a transport agent. Many vacancies and surface imperfection states have been found in the bulk and on the surface of the microplate because of the intrinsic defect nature of α-In2Se3. To discover physical and chemical properties and finding technological uses of α-In2Se3, several experiments including transmission electron miscopy (TEM), X-ray photoelectron spectroscopy (XPS), surface photovoltage (SPV), photoluminescence (PL), surface photoresponse (SPR), photoconductivity (PC), and thermoreflectance (TR) measurements have been carried out. Experimental results of TEM, XPS, SPV, PL, and SPR measurements show that a surface oxidation layer α-In2Se3–3xO3x (0 ≤ x ≤ 1) has formed on the crystal face of α-In2Se3 in environmental air with the inner layer content close to In2Se3 but the outermost layer content approaching In2O3. The near band edge transitions of α-In2Se3 microplates have been probed experimentally by TR and PC measurements. The direct band gap of α-In2Se3 has been determined to be 1.453 eV. The SPV result shows a maximum quantum efficiency of the surface oxide α-In2Se3–3xO3x (0 ≤ x ≤ 1) that presents a peak photoresponse near 2.18 eV. The analyses of SPV, SPR, PL, TR, and PC measurements revealed that the surface oxide layer facilitates the conversion of the ultraviolet to the visible range while the native defects (Se and In vacancies) sustain photoconductivity in the near-infrared region. On the basis of the experimental results a wide-energy-range photodetector that combines PC- and SPR-mode operations for α-In2Se3 microplate has been made. The testing results show a well-behaved function of photoelectric conversion in the near-infrared to ultraviolet region via the auxiliary forming of surface oxide on the crystalline face of the α-In2Se3 microplates.Keywords
This publication has 34 references indexed in Scilit:
- High performance single In2Se3 nanowire photodetectorApplied Physics Letters, 2011
- Multiple-level threshold switching behavior of In2Se3 confined in a nanostructured silicon substrateApplied Physics Letters, 2010
- Morphology-tunable In2Se3 nanostructures with enhanced electrical and photoelectrical performances via sulfur dopingJournal of Materials Chemistry, 2010
- Nanoscale Electronic Inhomogeneity in In2Se3 Nanoribbons Revealed by Microwave Impedance MicroscopyNano Letters, 2009
- Large Anisotropy of Electrical Properties in Layer-Structured In2Se3 NanowiresNano Letters, 2008
- Enhancement of band gap and photoconductivity in gamma indium selenide due to swift heavy ion irradiationJournal of Applied Physics, 2008
- Synthesis and Phase Transformation of In2Se3 and CuInSe2 NanowiresJournal of the American Chemical Society, 2006
- Anomalous photoconductivity in gamma In2Se3Journal of Applied Physics, 2006
- Low‐Voltage Transistor Employing a High‐Mobility Spin‐Coated Chalcogenide SemiconductorAdvanced Materials, 2005
- Growth of CuIn3Se5 layer on CuInSe2 films and its effect on the photovoltaic properties of In2Se3/CuInSe2 solar cellsThin Solid Films, 1998