GaN vertical and lateral polarity heterostructures on GaN substrates
Authors:
- 1 October 2011
- journal article
- research article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 332 (1) , 43-47
Abstract
No abstract availableKeywords
Funding Information
- Office of Naval Research
This publication has 24 references indexed in Scilit:
- Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivityPhysica Status Solidi (a), 2010
- Fabrication of a GaN lateral polarity junction by metalorganic chemical vapor depositionJournal of Crystal Growth, 2009
- Selective etching and TEM study of inversion domains in Mg-doped GaN epitaxial layersJournal of Crystal Growth, 2005
- Wet etching of GaN, AlN, and SiC: a reviewMaterials Science and Engineering: R: Reports, 2005
- Polarity inversion of GaN(0001) by a high Mg dopingJournal of Crystal Growth, 2004
- Control of the polarity of GaN films using an Mg adsorption layerJournal of Crystal Growth, 2003
- Mg-rich precipitates in the p-type doping of InGaN-based laser diodesApplied Physics Letters, 2002
- Faceted inversion domain boundary in GaN films doped with MgApplied Physics Letters, 2000
- Theory of doping and defects in III–V nitridesJournal of Crystal Growth, 1998
- Transmission electron microscopy characterization of GaN layers grown by MOCVD on sapphireMaterials Science and Engineering: B, 1997