Comparative analysis of 202¯1 and 202¯1¯ semipolar GaN light emitting diodes using atom probe tomography

Comparative analysis was performed on $20\overline{2}1$ and $20\overline{2}\overline{1}$ semipolar light emitting diodes using atom probe tomography. The quantification of 3D Indium distribution in the single quantum well (SQW) active region in these devices revealed a higher Indium incorporation in the $20\overline{2}\overline{1}$ GaN light emitting diode SQW consistent with the predicted polarization influenced energy landscape in the well. On the basis of the statistical analysis performed, the Indium distribution can be considered homogeneous—with any compositional variations attributed to random statistical fluctuations arising during the growth of these structures.