Quantum efficiency coefficient for photogeneration of carriers in SbSI nanowires
Authors:
- M. NowakM. Nowak
- Ł. BoberŁBŁ. Bober
- B. BorkowskiBBB. Borkowski
- M. KępińskaM. Kępińska
- P. SzperlichP. Szperlich
- D. StróżD. Stróż
- M. SozańskaMSM. Sozańska
- 1 October 2013
- journal article
- Published by Elsevier in Optical Materials
- Vol. 35 (12) , 2208-2216
Abstract
No abstract availableKeywords
This publication has 36 references indexed in Scilit:
- Temperature dependence of energy band gap and spontaneous polarization of SbSI nanowiresOptical Materials, 2013
- One-dimensional single crystalline antimony sulfur iodide, SbSIMaterials Letters, 2012
- Surface Roughness Assisted Growth of Vertically Oriented Ferroelectric SbSI NanorodsChemistry of Materials, 2012
- Influence of humidity on impedance of SbSI gelSensors and Actuators A: Physical, 2012
- XPS analysis of sonochemically prepared SbSI ethanogelApplied Surface Science, 2009
- Sonochemical preparation of SbSI gelUltrasonics Sonochemistry, 2008
- Quantum efficiency coefficient for photogeneration of carriers in gallium sulphide single crystalsJournal of Physics: Condensed Matter, 2007
- Interference photoconductivity and photoelectromagnetic effect in amorphous siliconPhysical Review B, 1989
- Direct measurement of the gap states and band tail absorption by constant photocurrent method in amorphous siliconSolid State Communications, 1981
- Derivation of the low-energy optical-absorption spectra of-Si: H from photoconductivityPhysical Review B, 1980