Space-charge-limited current in thin-film diamond

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Abstract
The electrical conduction in thin‐film diamond synthesized by microwave plasma enhanced chemical vapor deposition has been studied with metal‐diamond‐silicon metal‐insulator‐semiconductor structures. Measurements over a wide temperature range provide evidence for space‐charge‐limited current in the presence of traps. An exponential distribution of traps with a peak value of the order of 3×1020 cm−3 eV−1 has been deduced from the current‐voltage‐temperature data.

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