Thin-film field-effect transistors based on La-doped SrTiO3 heterostructures

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1 March 2004

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 84 (9) , 1573-1575
DOI:10.1063/1.1651647

Abstract

Field-effect transistors have been fabricated from epitaxialperovskitestrontiumtitanateheterostructures. Lanthanum-doped SrTiO 3 was used as the semiconducting channel while insulating SrTiO 3 was used as a gate insulator. Both depletion and accumulation effects in the channel have been studied from 300 to 4 K. Hall effect measurements indicate a temperature independent n -type carrier density around 5×10 19 cm −3 . At 300 K, typical mobilities are 2–3 cm 2 V −1 s −1 while low temperaturemobilities are as high as 15 cm 2 V −1 s −1 .

Keywords

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