Effect of contact-etch-stop-layer and Si 1-x Ge x channel mechanical properties on nano-scaled short channel NMOSFETs with dummy gate arrays
- 1 April 2018
- journal article
- research article
- Published by Elsevier in Microelectronics Reliability
- Vol. 83, 230-234
Abstract
No abstract availableKeywords
Funding Information
- Ministry of Science and Technology of Taiwan (103-2221-E-005-100-MY3, 105-2628-E-005-004-MY3)
- National Center for High-performance Computing
This publication has 10 references indexed in Scilit:
- Design and Reliability Assessment of Novel 3D-IC PackagingJournal of Mechanics, 2016
- Investigation of capacitance voltage characteristics of strained Si/SiGe n-channel MODFET varactorSolid State Sciences, 2016
- Strain engineering for electron mobility enhancement of strained Ge NMOSFET with SiGe alloy source/drain stressorsMicroelectronic Engineering, 2015
- Terahertz imaging using strained-Si MODFETs as sensorsSolid-State Electronics, 2013
- Introduction of local tensile strain on Ge substrates by SiGe stressors selectively grown on wet chemically recessed regions for strained Ge-nMOSFETsSolid-State Electronics, 2011
- Uniaxial Stress Engineering for High-Performance Ge NMOSFETsIEEE Transactions on Electron Devices, 2010
- Local-strain effects in Si∕SiGe∕Si islands on oxideApplied Physics Letters, 2005
- Exploring the limits of stress-enhanced hole mobilityIEEE Electron Device Letters, 2005
- High-mobility strained-Si PMOSFET'sIEEE Transactions on Electron Devices, 1996
- Piezoresistance Effect in Germanium and SiliconPhysical Review B, 1954