Wideband DHBTs using a graded carbon-doped InGaAs base
Authors:
- X.-M. FangXFX.-M. Fang
- D. LubyshevDLD. Lubyshev
- M. UrteagaMUM. Urteaga
- S. KrishnanSKS. Krishnan
- N. ParthasarathyNPN. Parthasarathy
- Y.M. KimYKY.M. Kim
- Y. WuYWY. Wu
- J.M. FastenauJFJ.M. Fastenau
- W.K. LiuWLW.K. Liu
- M.J.W. RodwellMRM.J.W. Rodwell
- 4 August 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 24 (7) , 433-435
Abstract
We report an InP/InGaAs/InP double heterojunction bipolar transistor (DHBT), fabricated using a mesa structure, exhibiting 282 GHz f/sub /spl tau// and 400 GHz f max . The DHBT employs a 30 nm InGaAs base with carbon doping graded from 8/spl middot/10/sup 19//cm 3 to 5/spl middot/10/sup 19//cm 3 , an InP collector, and an InGaAs/InAlAs base-collector superlattice grade, with a total 217 nm collector depletion layer thickness. The low base sheet (580 /spl Omega/) and contact (2 ) resistivities are in part responsible for the high f max observed.Keywords
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