Mechanical and transport properties of thermoelectric Bi-doped Mg2Si Ge Sn1 alloys
Authors:
- Meital CahanaMCMeital Cahana
- Yaniv GelbsteinYaniv Gelbstein
- 7 March 2025
- journal article
- Published by Elsevier in Journal of Alloys and Compounds
- Vol. 1021
Abstract
No abstract availableFunding Information
- Ben-Gurion University of the Negev
- Israel Science Foundation (617/24)
This publication has 33 references indexed in Scilit:
- The Mechanical Properties of Inorganic Thermoelectric Materials: A Review on Characterization Methods and CorrelationsChemnanomat, 2022
- Thermoelectric properties of materials near the band crossing line in Mg2Sn–Mg2Ge–Mg2Si systemActa Materialia, 2016
- Thermoelectric properties of highly efficient Bi-doped Mg 2 Si 1− x−y Sn x Ge y materialsActa Materialia, 2014
- A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the Ti0.3Zr0.35Hf0.35NiSn Half-Heusler AlloyJournal of Electronic Materials, 2013
- Physical, Mechanical, and Structural Properties of Highly Efficient Nanostructured n- and p-Silicides for Practical Thermoelectric ApplicationsJournal of Electronic Materials, 2013
- Phase stability of ternary antifluorite type compounds in the quasi-binary systems Mg2X–Mg2Y (X, Y = Si, Ge, Sn) via ab-initio calculationsIntermetallics, 2012
- Room-Temperature Mechanical Properties and Slow Crack Growth Behavior of Mg2Si Thermoelectric MaterialsJournal of Electronic Materials, 2012
- Effect of Sb Doping on the Thermoelectric Properties of Mg2Si0.7Sn0.3 Solid SolutionsJournal of Electronic Materials, 2011
- Preparation of Mg2Si1−x Sn x by Induction Melting and Spark Plasma Sintering, and Thermoelectric PropertiesJournal of Electronic Materials, 2010
- First-principles and experimental studies of impurity doping into Mg2SiIntermetallics, 2008