Photoemission of graded-doping GaN photocathode
Authors:
- Xiao-Qian FuXFXiao-Qian Fu
- Ben-Kang ChangBCBen-Kang Chang
- Xiao-Hui WangXWXiao-Hui Wang
- Biao LiBLBiao Li
- Yu-Jie DuYDYu-Jie Du
- Jun-Ju ZhangJZJun-Ju Zhang
- 1 March 2011
- journal article
- Published by IOP Publishing in Chinese Physics B
- Vol. 20 (3)
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Distribution of carriers in gradient-doping transmission-mode GaAs photocathodes grown by molecular beam epitaxyChinese Physics B, 2009
- Equivalent Method of Solving Quantum Efficiency of Reflection-Mode Exponential Doping GaAs PhotocathodeChinese Physics Letters, 2009
- Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxyApplied Optics, 2009
- Comparison between gradient-doping GaAs photocathode and uniform-doping GaAs photocathodeApplied Optics, 2007
- Electron scattering study within the depletion region of the GaN(0001) and the GaAs(100) surfaceApplied Physics Letters, 2004
- Field-assisted photoemission from InP/InGaAsP photocathode with p/n junctionApplied Physics Letters, 1997
- Field-assisted photoemission to 2.1 microns from a Ag/p-In0.77Ga0.23As photocathodeApplied Physics Letters, 1980
- Field-assisted minority carrier electron transport across a p-InGaAs/p-InP heterojunctionJournal of Vacuum Science and Technology, 1978
- Transferred electron photoemission from InPApplied Physics Letters, 1974
- Photoemissive, Photoconductive, and Optical Absorption Studies of Alkali-Antimony CompoundsPhysical Review B, 1958