A mixed Si and GaAs chip set for millimeter-wave automotive radar front-ends
Authors:
- A. WerthofAWA. Werthof
- H. TischerHTH. Tischer
- T. GraveTGT. Grave
- H. WerthmannHWH. Werthmann
- R.H. RasshoferRRR.H. Rasshofer
- W. KellnerWKW. Kellner
- 7 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 15292517,p. 191-194
Abstract
A chip set consisting of three GaAs HEMT MMICs (voltage-controlled oscillator, medium power amplifier, subharmonic mixer) and a discrete Si Schottky mixer diode has been developed for 77 GHz automotive radar systems. It facilitates the realization of a high performance millimeter-wave radar front-end with a minimum amount of chip area and, consequently, low production costs.Keywords
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