Direct measurement of terahertz conductivity in a gated monolayer semiconductor
Authors:
- Su-Di ChenSCSu-Di Chen
- Qixin FengQFQixin Feng
- Wenyu ZhaoWZWenyu Zhao
- Ruishi QiRQRuishi Qi
- Zuocheng ZhangZZZuocheng Zhang
- Dishan AbeysingheDADishan Abeysinghe
- Can UzundalCUCan Uzundal
- Jingxu XieJXJingxu Xie
- Takashi TaniguchiTTTakashi Taniguchi
- Kenji WatanabeKWKenji Watanabe
- Feng WangFWFeng Wang
Preprint
Abstract
Two-dimensional semiconductors and their moiré superlattices have emerged as important platforms for investigating correlated electrons. However, many key properties of these systems, such as the frequency-dependent conductivity, remain experimentally inaccessible because of the mesoscopic sample size. Here we report a technique to directly measure the complex conductivity of electrostatically gated two-dimensional semiconductors in the terahertz frequency range. Applying this technique to a WSe2 monolayer encapsulated in hBN, we observe clear Drude-like response between 0.1 and 1 THz, in a density range challenging to access even in DC transport. Our work opens a new avenue for studying tunable van der Waals heterostructures using terahertz spectroscopy.Keywords
All Related Versions
- Version 1, 2024-09-26, ArXiv
- Version 2, 2025-05-01, ArXiv
- Published version: Nano Letters, 25 (19), 7998.