Proton Conducting Perhydropolysilazane-Derived Gate Dielectric for Solution-Processed Metal Oxide-Based Thin-Film Transistors
- 9 March 2020
- journal article
- research article
- Published by American Chemical Society (ACS) in ACS Applied Materials & Interfaces
- Vol. 12 (13) , 15396-15405
Abstract
Perhydropolysilazane (PHPS) has attracted much attention as an inorganic polymer precursor for gate dielectrics of thin-film transistors (TFTs). However, in-depth understandings of tunable dielectric behavior of PHPS-derived dielectrics is still lacking. In this study, the PHPS-derived dielectric films formed at different temperatures are used as the gate dielectric for solution-processed indium-zinc-oxide (IZO) TFTs. Notably, TFTs incorporating PHPS annealed at 350oC exhibit mobility of 118 cm2/V-s, which is about 50 times IZO TFTs made on typical SiO2. The outstanding electrical performance is possible because of the exceptional capacitance of PHPS-derived dielectric formed at low processing temperature (< 400oC). According to our analysis, the exceptional dielectric behavior is originated from the electric double layer (EDL) formed by mobile of protons. Proton conduction through PHPS-dielectrics occurs through a three-dimensional pathway by hopping mechanism, which allows uniform polarization of the dielectric even at room temperature, thus, amplifying performance of TFTs.Keywords
Funding Information
- National Research Foundation of Korea (NRF-2016M3A7B4900119, NRF-2017M3D9A1073858)
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