SOI-MEMS Bulk Piezoresistive Displacement Sensor: A Comparative Study of Readout Circuits
- 20 December 2019
- journal article
- research article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Journal of Microelectromechanical Systems
- Vol. 29 (1) , 43-53
Abstract
Performance of several readout circuits, when applied to a MEMS-based bulk piezoresistive displacement sensor is compared in this study. The sensor comprises a pair of tilted clamped-guided silicon beams whose bulk piezoresistivity is used for displacement sensing. Wheatstone half-bridge, constant-voltage, and constant-current circuits are implemented to measure resistance changes of this sensor. We report full characterization of the sensor with these circuits and explore the sensor's important characteristics such as linearity, bandwidth, and noise. The results reveal that the constant-current circuit provides the highest sensitivity at equal-power bias condition. We find that the resolution of the sensor is degraded from 1.6 nm with the Wheatstone half-bridge and constant-voltage circuits to about 4.2 nm with the constant-current configuration. In the frequency domain, the sensor captures the full dynamics of the MEMS nanopositioner up to 20 kHz with all readout circuits. [2019-0168]Keywords
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