Kinetics of relaxation and recombination of nonequilibrium carriers in GaAs: Carrier capture by impurities
Authors:
- 15 June 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (12) , 7788-7799
Abstract
The kinetics of relaxation and recombination processes of nonequilibrium and quasiequilibrium charge carriers in high-purity n- and p-type GaAs are investigated. Luminescence spectra taken in time windows positioned at the end of excitation pulses of increasing length and the shape of corresponding luminescence transients are found to depend strongly on pulse length up to 500 ns. It is thus shown that quasiequilibrium of the excited state under continuous excitation is reached only after relatively long times.Keywords
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