The interface transport properties of Ge-GaAs heterojunctions
Authors:
- 31 December 1964
- journal article
- Published by Elsevier in Surface Science
- Vol. 2, 127-135
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Alloyed Germanium-Silicon HeterojunctionsJournal of Applied Physics, 1964
- Interface states in abrupt semiconductor heterojunctionsSolid-State Electronics, 1964
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964
- THE FIELD-EFFECT INTERFACE CONDUCTANCE IN Ge—GaAs n-n HETEROJUNCTIONSApplied Physics Letters, 1964
- Epitaxy of Compound Semiconductors by Flash EvaporationJournal of Applied Physics, 1963
- Diffusion of phosphorus in GaAs and formation of GaP and GaP-GaAs alloysSolid-State Electronics, 1962
- Experiments on Ge-GaAs heterojunctionsSolid-State Electronics, 1962
- Some Electrical Properties of Zinc Telluride—Cadmium Sulfide HeterojunctionsJournal of Applied Physics, 1961
- Tunnel Diodes by Vapor Growth of Ge on Ge and on GaAs [Letter to the Editor]IBM Journal of Research and Development, 1960