Nonalloyed Ohmic contacts to n-GaAs by molecular beam epitaxy
Authors:
- 1 October 1978
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 33 (7) , 651-653
Abstract
We report the formation of Ohmic contacts to n‐GaAs without the need for a high‐temperature alloy. Heavily doped n‐GaAs(Sn) was grown using molecular beam epitaxy in which the concentration of free carriers was as high as ‖ND−NA‖=6×1019 cm−3 yielding specific contact resistance rc=1.86×10−6 Ω‐cm2.Keywords
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