Stress operated random access, high-speed magnetic memory

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Abstract
The memory consists of a checkerboard pattern of transducers. Each transducer is connected to two lines of electrical conductors which form two grids of parallel lines. The grids are placed perpendicular to each other. A magnetic block is placed on top of each transducer. A magnetic field is applied to the system of magnetic blocks. It is slightly smaller than the coercive field H(c). One transducer generates a stress wave which will travel into the magnetic block adjacent to it. Its dipoles will line up parallel to the applied field if the stress is high enough. This corresponds to the writing process. If a stress wave interacts with a magnetic block which is magnetized antiparallel to the applied field, the block will reverse its magnetization direction. This leads to stress waves, which will induce a voltage in the transducer. No magnetic energy release and no generation of new stress waves is expected if the field is applied parallel to the magnetization direction of the block. This is the readout process.

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