Characterization of the oxidation rate of densified SiN thin films by Auger and infrared absorption spectroscopies
Authors:
- 1 December 1997
- journal article
- Published by Elsevier in Thin Solid Films
- Vol. 311 (1-2) , 38-43
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Hydrogen content and annealing of memory quality silicon-oxynitride filmsJournal of Electronic Materials, 1976
- Submicron thickness calibration of vapor-deposited SiO2 films by infrared spectroscopyJournal of Applied Physics, 1973
- Conversion of silicon nitride into silicon dioxide through the influence of oxygenSolid-State Electronics, 1971
- General Relationship for the Thermal Oxidation of SiliconJournal of Applied Physics, 1965