The Origin of the DX Center in Al_xGa_1-xAs

This publication has 22 references indexed in Scilit:

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  Physical Review B, 1986
• A Simple Calculation of the DX Center Concentration Based on an L-Donor Model
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  Physical Review B, 1984
• Donor Levels in Si-Doped AlGaAs Grown by MBE
  Japanese Journal of Applied Physics, 1984
• Elimination of Persistent Photoconductivity and Improvement in Si Activation Coefficient by Al Spatial Separation from Ga and Si in Al–Ga–As:Si Solid System –a Novel Short Period AlAs/n-GaAs Superlattice–
  Japanese Journal of Applied Physics, 1983
• Si and Sn Doping in Al_xGa_1-xAs Grown by MBE
  Japanese Journal of Applied Physics, 1982
• An Anomaly in the Relation of Hall Coefficient to Resistivity in n-Type Al_xGa_1-xAs
  Japanese Journal of Applied Physics, 1981
• Theory of Substitutional Deep Traps in Covalent Semiconductors
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  Physical Review B, 1980
• Trapping characteristics and a donor-complex ($\mathrm{DX}$) model for the persistent-photoconductivity trapping center in Te-doped ${\mathrm{Al}}_x{\mathrm{Ga}}_{1-x}\mathrm{As}$
  Physical Review B, 1979