Epitaxial Growth of Diamond on Iridium
Authors:
- Kazuki OhtsukaKOKazuki Ohtsuka
- Kazuhiro SuzukiKSKazuhiro Suzuki
- Atsuhito SawabeASAtsuhito Sawabe
- Tadao InuzukaTITadao Inuzuka
- 1 August 1996
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 35 (8B) , L1072-1074
Abstract
Epitaxial growth of diamond on iridium thin films was performed by direct-current plasma chemical vapor deposition with ion irradiation pretreatment of the substrate. Pyramidal epitaxial diamond particles with a number density of ∼108cm-2were grown on the iridium film. The epitaxial relation is written as (100)diamond//(100)iridiumand [001]diamond//[001]iridium. Tilting of the epitaxial relation, as occasionally observed for diamond on silicon or beta silicon carbide, is scarcely observed. Erosion,as observed for diamond on nickel substrates, is not observed. The effect of the ion irradiation of the substrate is discussed briefly.Keywords
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