Transfer of graphene thin film obtained by PECVD method to Au/p-Si rectifier junction as interfacial layer and analysis of its barrier characteristics depending on sample temperature

This publication has 36 references indexed in Scilit:

• Temperature dependent current–voltage characteristics of the Zn/ZnO/n-Si/Au–Sb structure with ZnO interface layer grown on n-Si substrate by SILAR method
  Microelectronic Engineering, 2011
• One-step reduction of graphene oxide with l-glutathione
  Colloids and Surfaces A: Physicochemical and Engineering Aspects, 2011
• Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper
  Journal of the American Chemical Society, 2011
• Analysis of the electrical characteristics of Zn/ZnSe/n-Si/Au–Sb structure fabricated using SILAR method as a function of temperature
  Journal of Alloys and Compounds, 2010
• Preparation of graphene by exfoliation of graphite using wet ball milling
  Journal of Materials Chemistry, 2010
• The analysis of the charge transport mechanism of n-Si/MEH-PPV device structure using forward bias I–V–T characteristics
  Journal of Alloys and Compounds, 2010
• The effects of the temperature on I-V and C-V characteristics of Al/P2ClAn(C₂H₅COOH)/p-Si/Al structure
  The European Physical Journal Applied Physics, 2009
• How silicon leaves the scene
  Nature Materials, 2009
• Interface states density distribution in Au/n-GaAs Schottky diodes on n-Ge and n-GaAs substrates
  Materials Science and Engineering: B, 2001
• Electron transport at metal-semiconductor interfaces: General theory
  Physical Review B, 1992