Electrical characteristics of directly-bonded GaAs and InP
Authors:
- 15 February 1993
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 62 (7) , 738-740
Abstract
The electrical characteristics of directly bonded GaAs/InP heterointerfaces have been investigated for the first time. The mirror-polished surfaces of GaAs and InP wafers were put face to face and bonded by heat treatment at temperatures ranging from 450 to 700 °C. The wafers were successfully bonded without using any solders at all the temperatures tested. 1.3 μm InP/GaInAsP lasers were fabricated on GaAs substrates using direct bonding at 450 °C, and room-temperature lasing operation has been achieved with the threshold current identical to that of conventional InP lasers.Keywords
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