Metal-semiconductor field-effect transistors fabricated in GaAs layers grown directly on Si substrates by molecular beam epitaxy
Authors:
- 15 November 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 45 (10) , 1107-1109
Abstract
Device‐quality GaAs layers have been grown directly on Si(100) substrates by molecular beam epitaxy. Metal‐semiconductor field‐effect transistors have been fabricated in these layers with transconductance as high as 85 mS/mm and leakage current as low as 1 μA at Vgs =−3 V for gate dimensions of 2.0 μm×200 μm.Keywords
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