Principles for 2D‐Material‐Assisted Nitrides Epitaxial Growth

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Abstract
Beyond traditional heteroepitaxy, 2D‐materials‐assisted epitaxy opens opportunities to revolutionize future material integration methods. However, basic principles in 2D‐material‐assisted nitrides’ epitaxy remain unclear, which impedes understanding the essence, thus hindering its progress. Here, the crystallographic information of nitrides/2D material interface is theoretically established, which is further confirmed experimentally. It is found that the atomic interaction at the nitrides/2D material interface is related to the nature of underlying substrates. For single‐crystalline substrates, the heterointerface behaves like a covalent one and the epilayer inherits the substrate's lattice. Meanwhile, for amorphous substrates, the heterointerface tends to be a van der Waals one and strongly relies on the properties of 2D materials. Therefore, modulated by graphene, the nitrides’ epilayer is polycrystalline. In contrast, single‐crystalline GaN films are successfully achieved on WS2. These results provide a suitable growth‐front construction strategy for high‐quality 2D‐material‐assisted nitrides’ epitaxy. It also opens a pathway toward various semiconductors heterointegration.
Funding Information
  • National Key Research and Development Program of China (2019YFA0708202, 2021YFB3600401)
  • National Natural Science Foundation of China (61974140)

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