Guided growth of in-plane silicon nanowires
- 14 September 2009
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 95 (11) , 113106
Abstract
We report on a guided growth of silicon nanowires (SiNWs) based on an in-plane solid-liquid-solid mechanism, which provides a general strategy to deploy SiNWs precisely into desired circuits. During a reacting-gas-free annealing process, the SiNWs are activated to grow and be guided into predefined patterns by effective controlling the movement of the catalyst drops. We demonstrate three different approaches to achieve a guided growth of SiNWs, which are as follows: (1) by an a-Si:H channel, (2) by a step edge, and (3) by an a-Si:H edge. These results provide a design principle for future SiNWs-based nanodevices.Keywords
This publication has 12 references indexed in Scilit:
- An In-Plane Solid-Liquid-Solid Growth Mode for Self-Avoiding Lateral Silicon NanowiresPhysical Review Letters, 2009
- Electronic transport of silicon nanowires grown in porous Al2O3 membraneApplied Physics Letters, 2007
- SEMICONDUCTOR NANOWIRES AND NANOTUBESAnnual Review of Materials Research, 2004
- Controlled Growth and Structures of Molecular-Scale Silicon NanowiresNano Letters, 2004
- Nanoscale Science and Technology: Building a Big Future from Small ThingsMRS Bulletin, 2003
- High Performance Silicon Nanowire Field Effect TransistorsNano Letters, 2003
- Epitaxial core–shell and core–multishell nanowire heterostructuresNature, 2002
- Directed Assembly of One-Dimensional Nanostructures into Functional NetworksScience, 2001
- Calorimetric evidence for structural relaxation in amorphous siliconPhysical Review Letters, 1989
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964