Growth mechanism of dark-line defects in high radiance GaAlAs LED's

Authors:
  • TST. Sugahara
    T. Sugahara
  • OHO. Hasegawa
    O. Hasegawa
  • YTY. Toyama
    Y. Toyama
  • HTH. Takanashi
    H. Takanashi
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Abstract
The dependence of the growth velocity of dark-line defects on current density, temperature and acceptor doping was investigated in the GaAlAs LED's. The velocity depends strongly on the current density (J) and acceptor doping(carrier concentration;P). But it does not depend on the ambient temperatures(20∼250°C). The current density dependence of the velocity (V DLD ) was shown as V DLD ∝ J 2 . Acceptor doping dependence was separated in to two regions; V DLD ∝ p -1/3 (where 10 16 ≤ p ≤ 5×10 18 cm -3 ) and V DLD ∝ p -3 (where p ≥ 5×10 18 cm -3 ). The growth of DLD during the operation is presumably limited by the interactions with impurities. Slow degradation of the LED's without dark structures was also investigated, and the extrapolated half-life in excess of 4×10 7 h was estimated.