Influence of a non-ideal sidewall angle of extreme ultra-violet mask absorber for 1 ×-nm patterning in isomorphic and anamorphic lithography
Authors:
- Ki-Ho KoKKKi-Ho Ko
- Yongseung MoonYMYongseung Moon
- Changyeong JeongCJChangyeong Jeong
- Heebom KimHKHeebom Kim
- Chan-Uk JeonCJChan-Uk Jeon
- Hye-Keun OhHOHye-Keun Oh
- 1 September 2017
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 181, 1-9
Abstract
No abstract availableFunding Information
- Samsung
- MOTIE
- KSRC (Korea Semiconductor Research Consortium (10445366)
This publication has 10 references indexed in Scilit:
- YieldStar based reticle 3D measurements and its application2016
- Anisotropic shadow effects with various pattern directions in an anamorphic high numerical aperture systemJournal of Micro/Nanolithography, MEMS, and MOEMS, 2016
- Feasibility of a new absorber material for high NA extreme ultraviolet lithography2016
- Anamorphic high-NA EUV lithography optics2015
- Imaging performance of the EUV high NA anamorphic system2015
- Achievements and challenges of EUV mask imaging2014
- Evaluation of resist performance with EUV interference lithography for sub-22-nm patterning2012
- Cleaning Challenges of EUV Mask Substrates, Blanks, and Patterned MaskECS Transactions, 2011
- Control of the sidewall angle of an absorber stack using the Faraday cage system for the change of pattern printability in EUVL2008
- Impact of slanted absorber side wall on printability in EUV lithography2005