High pressure studies of radiative recombination mechanisms in InN
- 27 December 2006
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 244 (1) , 38-41
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Effects of electron concentration on the optical absorption edge of InNApplied Physics Letters, 2004
- Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloysApplied Physics Letters, 2003
- Surface charge accumulation of InN films grown by molecular-beam epitaxyApplied Physics Letters, 2003
- Influence of pressure on the optical properties ofepilayers and quantum structuresPhysical Review B, 2001
- Band-edge hydrostatic deformation potentials in III-V semiconductorsPhysical Review Letters, 1987