Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film
- 21 February 2012
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 33 (4) , 516-518
Abstract
An effective passivation technique for AlGaN/GaN high-electron-mobility transistors (HEMTs) is presented. This technique features an AlN thin film grown by plasma-enhanced atomic layer deposition (PEALD). With in situ remote plasma pretreatments prior to the AlN deposition, an atomically sharp interface between ALD-AlN and III-nitride has been obtained. Significant current collapse suppression and dynamic ON-resistance reduction are demonstrated in the ALD-AlN-passivated AlGaN/GaN HEMTs under high-drain-bias switching conditions.Keywords
This publication has 17 references indexed in Scilit:
- AlN Passivation Over AlGaN/GaN HFETs for Surface Heat SpreadingIEEE Transactions on Electron Devices, 2010
- Fabrication and Properties of AlN Film on GaN Substrate by Using Remote Plasma Atomic Layer Deposition MethodElectronic Materials Letters, 2009
- Delay Time Analysis of AlGaN/GaN Heterojunction Field-Effect Transistors with AlN or SiN Surface PassivationJapanese Journal of Applied Physics, 2009
- Localization of oxygen donor states in gallium nitride from first-principles calculationsPhysical Review B, 2007
- Al N ∕ Al Ga N ∕ Ga N metal-insulator-semiconductor high-electron-mobility transistor on 4in. silicon substrate for high breakdown characteristicsApplied Physics Letters, 2007
- Improved reliability of AlGaN-GaN HEMTs using an NH/sub 3/ plasma treatment prior to SiN passivationIEEE Electron Device Letters, 2005
- Effects of a molecular beam epitaxy grown AlN passivation layer on AlGaN/GaN heterojunction field effect transistorsSolid-State Electronics, 2004
- Surface Passivation of AlGaN/GaN HFETs Using AlN Layer Deposited by Reactive Magnetron Sputteringphysica status solidi (c), 2002
- Si 3 N 4 / AlGaN/GaN –metal–insulator–semiconductor heterostructure field–effect transistorsApplied Physics Letters, 2001
- Low interface state density AlN/GaN MISFETsElectronics Letters, 1999