Origin of high hole concentrations in Mg‐doped GaN films
- 18 April 2017
- journal article
- research article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 254 (8)
Abstract
The origin for high hole concentration in Mg‐doped GaN films grown by metal‐modulated epitaxy has been explored. We observe a Mg acceptor band characterized by a broad emission without phonon replicas and a high energy tail that overlaps with the valence band of GaN, giving rise to a reduced effective Mg activation energy. We attribute the high hole concentrations to the reduction of compensating nitrogen vacancy concentration and to effectively dispersed Mg atoms, which are incorporated into the lattice as single substitutional atoms. This has been achieved by a low temperature growth, a decrease in the III/V ratio, and a planar growth interface that results from the layer‐by‐layer approach using the metal‐modulated epitaxial technique.Keywords
Funding Information
- National Science Foundation
This publication has 37 references indexed in Scilit:
- Nature of the 2.8 eV photoluminescence band in Mg doped GaNApplied Physics Letters, 1998
- Mg-doped p-type GaN grown by reactive molecular beam epitaxyApplied Physics Letters, 1996
- Activation of acceptors in Mg-doped GaN grown by metalorganic chemical vapor depositionApplied Physics Letters, 1996
- On p-type doping in GaN—acceptor binding energiesApplied Physics Letters, 1995
- The influence of oxygen on the electrical and optical properties of GaN crystals grown by metalorganic vapor phase epitaxyJournal of Applied Physics, 1992
- Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LEDJournal of Luminescence, 1991
- P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)Japanese Journal of Applied Physics, 1989
- Violet luminescence of Mg-doped GaNApplied Physics Letters, 1973
- Donor-acceptor pair recombination in GaNSolid State Communications, 1971
- THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaNApplied Physics Letters, 1969